Journal Club for Condensed Matter Physics

Using nitrogen-vacancy defects in diamond as in-situ sensors of band bending

Posted in Journal Articles on October 30, 2018 at 3:27 pm by JCCMP

Spatial mapping of band bending in semiconductor devices using in situ quantum sensors
Authors: D.A. Broadway, N. Dontschuk, A. Tsai, S. E. Lillie, C. T.-K. Lew, J. C. McCallum, B. C. Johnson, M. W. Doherty, A. Stacey, L. C. L. Hollenberg & J.-P. Tetienne
Nature Electronics 1, 502–507 (2018)

Recommended with a commentary by Toeno van der Sar, Kavli Institute of Nanoscience, Delft University of Technology.
|View Commentary (pdf)|

DOI: 10.36471/JCCM_October_2018_02
https://doi.org/10.36471/JCCM_October_2018_02

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Using nitrogen-vacancy defects in diamond as in-situ sensors of band bending

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