Using nitrogen-vacancy defects in diamond as in-situ sensors of band bending
Spatial mapping of band bending in semiconductor devices using in situ quantum sensors Authors: D.A. Broadway, N. Dontschuk, A. Tsai, S. E. Lillie, C. T.-K. Lew, J. C. McCallum, B. C. Johnson, M. W. Doherty, A. Stacey, L. C. L. Hollenberg & J.-P. Tetienne Nature Electronics 1, 502–507 (2018) Recommended with a commentary by Toeno […]