Developments in Topological Insulators
1. Quantum Hall effect from the topological surface states of strained bulk HgTe
Authors: C. Brune, C.X. Liu, E.G. Novik, E.M. Hankiewicz, H. Buhmann, Y.L. Chen, X.L. Qi, Z.X. Shen, S.C. Zhang and L.W. Molenkamp
Phys. Rev. Lett. 106, 126803 (2011)
2. Gate-tuned normal and superconducting transport at the surface of a topological insulator,
Authors: B. Sacepe, J.B. Oostinga, J. Li, A. Ubaldini, N.J.G. Couto, E. Giannini and A.F. Morpurgo,
arXiv:1101.2352
Recommended with a commentary by Carlo Beenakker, Leiden University | View Commentary (pdf) |
DOI: 10.36471/JCCM_April_2011_01
https://doi.org/10.36471/JCCM_April_2011_01